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Bolo
Joined: 05 Dec 2017
Posts: 727
Location: 506F6C616E64
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 Posted: Thu Aug 05, 2021 14:36 Post subject: New Samsung NAND RR - R&D
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Hello,
Does anyone tried to crack RR for 19nm MLC (EC DE A4 32) /TLC Samsung (EC DE 98 DE) NAND (registers 0xa7 ...... 0xa6) ??
We do some research work (extracted commands, registers and valuses) but still can't force FE by Debug commands to accept the set value to relevant registers.
All solutions on the market (FE, VNR and PC3000) using this same RR configuration for Samsung NAND and this RR working only with old 32nm chips (base 9 registers in VNR and PC3000 form 0xB1 to 0x12) and extra 3 registers available in FE. Also configuration of RR of those TLC NAND is totaly diffrent.
If someone have knowledge about samsung read retry please, contact with us maybe together we will make it work.
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Bolo
Joined: 05 Dec 2017
Posts: 727
Location: 506F6C616E64
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Posted: Wed Aug 11, 2021 11:21 Post subject:
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MLC new RR register is cracked - instruction how to implement into FE sended over Skype
now working on TLC
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jeremyb
Joined: 09 Dec 2008
Posts: 1950
Location: RecoverMyFlashDrive.com Bridgeport, CT, USA
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Posted: Thu Aug 12, 2021 1:51 Post subject:
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Good Job 
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Сергей
Joined: 26 Aug 2005
Posts: 20282
Flash-Extractor developer
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Posted: Mon Aug 16, 2021 11:57 Post subject:
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Thanks, Bolo
From me, and all FE users
Samsung v3 RR added to FE_1027
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